AT25SF041B : Block Erase Time after 500 Cycles - Temperature Influence?

Dear Renesas Team,

During a lifetime test of our product, we observed that the block erase time (4kb) increased from approximately 60ms to 600ms after 500 erase cycles. The test duration was 40 days at a temperature of 50°C.

Could you please inform us about the potential factors contributing to this aging? Is there a known impact of temperature when combined with the number of erase cycles? Do you have any data on how the erase time increases over the lifetime?

Best regards,

Ralf

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  • Hi Ralf,

    We need more information about your test:
    In the test did you erase every and program each and every 4K block in the memory array in each of the 500 test cycles?
    Did you do continouosly?

    Best Regards,
    OV_Renesas

  • Hello OV,

    in the time of 40days every 2 hours one 4k block was erased and in another 4k Block the data was stored. In the next 2 hour cycle the before erased block is programmed and the other block is erased. In fact this means that one block only get 240 erase cycles. The reason for this alternating erase / write cycles is to enable a quick programming.

    best regards

              Rastarmann

Reply
  • Hello OV,

    in the time of 40days every 2 hours one 4k block was erased and in another 4k Block the data was stored. In the next 2 hour cycle the before erased block is programmed and the other block is erased. In fact this means that one block only get 240 erase cycles. The reason for this alternating erase / write cycles is to enable a quick programming.

    best regards

              Rastarmann

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