Hello!
ISL81601 datasheet states:
"The ISL81601 incorporates an adaptive dead time algorithm that optimizes operation with varying MOSFET conditions. This algorithm provides approximately 16ns dead time between the switching of the upper and lower MOSFETs. This dead time is adaptive and allows operation with different MOSFETs without having to externally adjust the dead time using a resistor or capacitor. During turn-off of the lower MOSFET, the LGATE voltage is monitored until it reaches a threshold of 1V, at which time the UGATE is released to rise. Adaptive dead time circuitry monitors the upper MOSFET gate voltage during UGATE turn-off. When the upper MOSFET gate-to-source voltage drops below a threshold of 1V, the LGATE is allowed to rise. Renesas recommends not using a resistor between the driver outputs and the respective MOSFET gates, because it can interfere with the dead time circuitry."
https://www.renesas.com/us/en/document/dst/isl81601-datasheet?r=501771
page 41
So it sugest not to use resistors at MOSFET gates.
However shematics of DEMO1Z and DEMO2Z boards include 2R2 resistors for MOSFET gates.
https://www.renesas.com/us/en/document/mat/isl81601demo1z-user-guide?r=1500826
page 10
https://www.renesas.com/us/en/document/mah/isl81601demo2z-users-manual
page 16
What is the explanation of this contradiction?
Best regards Dominik Bejma