The datasheet states that EEPROM read/write operations to the first byte of a four byte page initiate a page recall, and should be done twice to ensure valid data.
What happens if I first read/write the byte at address 0 (initiating a page recall for page 0) and then read/write the byte at address 5? Will that
I guess what I'm asking is effectively: when I'm reading from/writing to a page that wasn't used in the previous EEPROM read/write command, should i always do that twice to account for a page recall?
Hi Jazzpi,
1. Will that correctly read/write at address 5?
Not on the first try. It will likely initiate a page recall for Page 1, but the operation itself might not be reliable.
2. Read/write from/to the previously recalled page, i.e. effectively at address 1?
No, the EEPROM will correctly identify that address 5 is on a different page, so it won’t mistakenly act on Page 0.
3. Initiate a page recall of page 1 and read invalid data/not write?
Yes. That’s the most accurate. The first access to a new page initiates a recall, and the data may not be valid until a second access.
Let me know if you have any further doubt
Thanks, and regards,Avinash Kumar