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ISL78113A shutdown current

The datasheet for the ISL78113A states that Iq is < 50 nA during shutdown.  However, the datasheet lists the leaking into SW can be as high as 15 uA during shutdown.  Both are attached to the VBat (SW via the inductor as shown in Fig 1), so realistically the VBat net is seeing a drainage of more then 15 uA even during shutdown.  Is that correct?  That seems very high considering the text description is written to imply that the device places a very small drain on VBat during shutdown.

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